Work

The aim of this work is to optimize the deposition process conditions aluminum doped ZnO films and solid solutions (ZnOS, ZnCdO), quantum well structures (ZnO/ZnCdO/ZnO) and ZnO micro- and nanostructures with improved optical and electrical properties and with higher resistance to the effect of certain types of radiation for use in photovoltaic devices. The complex investigations of the films and structures was carried out by using a modern high-precision experimental methods: X-ray diffraction, Raman scattering, atomic force microscopy, scanning electron microscopy, Fourier infrared and energy dispersive spectroscopes, measuring electric, photovoltaic, optical and luminescence characteristics. The ZnO:Al films were obtained with a conductivity 6·10 4 Ω·cm and transmittance of 95 % at the level of the best world results. It is found that the ZnO films doped by small cadmium concentrations are more resistant to swift heavy ions irradiation compared with undoped zinc oxide films. The method of growing ZnO micro- and nanostructures that uses solar radiation for precursor evaporating was developed. The nature of the composite depending of bandgap for ZnO1-xSx was discovered. The influence mechanisms of growth conditions on the ZnO1-xSx films properties were proposed as well as their electronic structure and quantum-mechanical nature of interband optical transitions were studied. The solar cells on the basis of ZnO1-xSx solid solution and CIGS achieved efficiency of 10 %. The results are of practical importance for the development of the Ukrainian scientific and technical basis of the new devices of photonics in particular in the framework of the priority directions of science and technology development "The new materials and substances" and "Energy and energy efficiency". Scientific publications on the topic of work: 20 papers in the domestic and international journals with high impact factor. Total sum of the times cited - 193 (according to the SCOPUS database), h-index - 8. Total number of authors’ publications - 188.