Work

The planned project is devoted to the ultra-bright LEDі structures study based on InGaN with quantum wells grown by the latest technologies, which are widely used primarily in the optoelectronics, control systems, processing and information storage in industrial facilities, transport and in everyday life. The spectral latitude of their field of application is from the visible range to the ultraviolet, which makes them universal sources for optoelectronics. Further increase in the efficiency of these emitters is based on obtaining and refining information about the mechanisms of luminescence and the influence of factors that prevent the increase of quantum yield. The active elements radiation resistance study is the component of ensuring the operation reliability of the above-mentioned penetrating radiation high-power sources. The permeable radiation using for the controlled structural defects introduction purpose into the studied objects can help to clarify their role in the devices characteristics degradation mechanism. Considerable attention will be paid to obtaining data on the probable S-type negative difference resistance nature on the C–V characteristics of the studied objects and determining the tunnel component role through barrier layers in the InGaN / GaN structure and the radiation defects impact on ballistic media transport. An important task will be to obtain the radiation damage constants of the carrier lifetime k for particles different types - γ-cobalt-60, 2 MeV electrons and reactor neutrons. The obtained results will make it possible to use permeable radiation as a tool for purposeful change of LED characteristics - parameters unification, speed increase, flow currents reduction, optoelectronic modules service life limits establishment, diodes electric strength increase. The combined treatment using of acoustic-thermal, acousto-injection, injection-thermal is promising in order to restore degraded samples.